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 ES1PA thru ES1PD
New Product
Vishay Semiconductors
formerly General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
Case Style SMP
Cathode band
Features
* * * * * * *
Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 15 ns
0.086 (2.18) 0.074 (1.88)
0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70)
Very low profile - typical height of 1.0mm For surface mount application Glass passivated chip junction Ultrafast recovery times for high efficiency Low forward voltage, low power loss Built in strain relief, ideal for automated placement High temperature soldering: 260C maximum/10 seconds at terminals * Meets MSL level 1 per J-STD-020C
Mechanical Data
0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.000 (0.00)
0.018 (0.45) 0.006 (0.15)
Case: SMP Terminals: Matte Tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0009 oz., 0.024 g Epoxy meets UL 94V-0 flammability rating
Mounting Pad Layout
0.012 (0.30) REF
Dimensions in inches and (millimeters)
0.105 (2.67)
0.025 (0.635)
0.030 (0.762)
0.053 (1.35) 0.041 (1.05)
0.036 (0.91) 0.024 (0.61)
0.100 (2.54)
0.050 (1.27)
0.103 (2.60) 0.087 (2.20)
0.032 (0.80) 0.016 (0.40)
Maximum Ratings & Thermal Characteristics (TA = 25C unless otherwise noted.)
Parameter Device marking code Maximum reverse voltage Maximum average forward rectified current see Fig.1 Peak forward surge current 10ms single half sine-wave superimposed on rated load Typical thermal resistance (1) Operating junction and Storage temperature range Symbol VRM IF(AV) IFSM RJA RJL RJC TJ, TSTG ES1PA EA 50 ES1PB EB 100 1.0 30 105 15 20 -55 to +150 ES1PC EC 150 ES1PD ED 200 Unit V A A C/W C
Electrical Characteristics
(TA = 25C unless otherwise noted.)
Parameter Symbol Maximum instantaneous forward voltage(2) at IF=0.6A, TJ=25C VF at IF=1A, TJ=25C Maximum reverse current TJ = 25C IR at rated VRM(2) TJ =125C Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A trr Typical reverse recovery time at TJ=25C trr at IF = 1.0A, VR = 30V dv/dt = 50A/s, Irr = 10% IRM TJ=100C Typical reverse recovery time at TJ=25C Qrr at IF = 1.0A, VR = 30V dv/dt = 50A/s, Irr = 10% IRM TJ=100C Typical junction capacitance at 4.0V, 1MHz CJ
Value 0.865 0.920 5.0 500 15 25 30 8 10 10
Unit V A ns ns nC pF
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RJL is measured at the terminal of cathode band. RJC is measured at the top centre of the body (2) Pulse test: 300s pulse width, 1% duty cycle
Document Number 88918 23-Sep-04
www.vishay.com 1
ES1PA thru ES1PD
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
1.2 30
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
1.0 0.8 0.6 0.4 TL measured at the cathode band terminal 0.2 0 80 90 100 110 120 130 140 150
25
20 15
10 05
0 1 10 100
Lead Temperature (C)
Number of Cycles at 50 HZ
Fig. 3 - Typical Instantaneous Forward Characteristics
100 10000
Fig. 4 - Typical Reverse Leakage Characteristics
Instantaneous Reverse Current (A)
1000 100 TJ = 125C 10 TJ = 150C
Instantaneous Forward Current (A)
10
TJ = 150C
1 TJ = 25C 0.1
1 0.1 0.01 TJ = 25C
TJ = 125C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
20
30
40
50
60
70
80
90
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
100 1000
Fig. 6 - Typical Transient Thermal Impedance
Transien Thermal Impedance (C/W)
Junction Capacitance (pF)
100
10
10
1 0.1 1 10 100
1 0.01
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com 2
Document Number 88918 23-Sep-04


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